Atom Probe Tomography of <italic>a</italic>-Axis GaN Nanowires: Analysis of Nonstoichiometric Evaporation Behavior
نویسندگان
چکیده
James R. Riley, Rodrigo A. Bernal, Qiming Li, Horacio D. Espinosa, George T. Wang, and Lincoln J. Lauhon* Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States, Department of Mechanical Engineering, Northwestern University, Evanston, Illinois 60208, United States, and Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
منابع مشابه
Atom probe tomography of a-axis GaN nanowires: analysis of nonstoichiometric evaporation behavior.
GaN nanowires oriented along the nonpolar a-axis were analyzed using pulsed laser atom probe tomography (APT). Stoichiometric mass spectra were achieved by optimizing the temperature, applied dc voltage, and laser pulse energy. Local variations in the measured stoichiometry were observed and correlated with facet polarity using scanning electron microscopy. Fewer N atoms were detected from nonp...
متن کاملThree dimensional investigation for the 22-nm-node and beyond: surface morphology of gate-all-around transistors
Gate-all-around (GAA) Si nanowire transistors are promising candidates for future CMOS devices [1]. They present a low off-state leakage current and offer high performance for sub-22 nm technologies [2]. The fabrication of such devices involves the conformal deposition of the gate stack directly around etched semiconductor Si nanowires. It is known that electrical properties of these devices ar...
متن کاملDesigned Quasi-1D Potential Structures Realized in Compositionally Graded InAs<sub>1–<italic>x</italic></sub>P<sub><italic>x</italic></sub> Nanowires
III−V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconducto...
متن کاملProbing Structural, Electronic, and Magnetic Properties of Iron-Doped Semiconductor Clusters Fe<sub>2</sub>Ge<sub><italic>n</italic></sub><sup>–/0</sup> (<italic>n</italic> = 3–12) via Joint Photoelectron Spectroscopy and Density Functional Study
We present a joint experimental and theoretical study on double iron atom doped germanium clusters, Fe2Gen −/0 (n = 3−12). The experimental photoelectron spectra of cluster anions are reasonably reproduced by theoretical simulations. The low-lying structures of the iron-doped semiconductor clusters are obtained by using an ab initio computation-based genetic-algorithm global optimization method...
متن کاملLithium Insertion In Silicon Nanowires: An ab<italic></italic> Initio Study
The ultrahigh specific lithium ion storage capacity of Si nanowires (SiNWs) has been demonstrated recently and has opened up exciting opportunities for energy storage. However, a systematic theoretical study on lithium insertion in SiNWs remains a challenge, and as a result, understanding of the fundamental interaction and microscopic dynamics during lithium insertion is still lacking. This pap...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012